High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer
文献类型：期刊论文
| 作者 | Xu, Leilei1,2; Li, Xiaomin1; Zhu, Qiuxiang1; Xu, Xiaoke1,3; Qin, Meng1,2 |
| 刊名 | Materials Letters
 |
| 出版日期 | 2017 |
| 卷号 | 193页码:240-243 |
| ISSN号 | 0167577X |
| DOI | 10.1016/j.matlet.2017.01.125 |
| 英文摘要 | The highly (1 1 1)-oriented BiFe0.95Mn0.05O3(BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3(LSMO)/TiO2bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2bi-layer buffer, the lattice mismatch between perovskite (1 1 1) BFMO and wurtzite (0 0 0 2) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (1 1 1) film were determined to be 115 μC/cm2and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (1 1 1) film owned perfect ferroelectric switching properties. © 2017 Elsevier B.V. |
| 源URL | [http://ir.sic.ac.cn/handle/331005/25755]  |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 作者单位 | 1.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, No. 1295 Dingxi Road, Shanghai; 200050, China; 2.University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing; 100049, China; 3.School of Materials Science and Engineering, Shanghai Institute of Technology, No. 100 Haiquan Road, Shanghai; 201418, China |
| 推荐引用方式 GB/T 7714 | Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,et al. High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer[J]. Materials Letters,2017,193:240-243. |
| APA | Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,Xu, Xiaoke,&Qin, Meng.(2017).High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer.Materials Letters,193,240-243. |
| MLA | Xu, Leilei,et al."High-performance BiFe0.95Mn0.05O3ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2bi-layer buffer".Materials Letters 193(2017):240-243. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。