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Enhanced thermoelectric performance in Cu2GeSe3 via (Ag,Ga)-co-doping on cation sites

文献类型：期刊论文

作者Wang, Ruifeng1,4; Li, Ang2; Huang, Tianyu1,4; Zhang, Bin3; Peng, Kunling1,3; Yang, Hengquan3; Lu, Xu3; Zhou, Xiaoyuan3; Han, Xiaodong2; Wang, Guoyu1,4
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2018-11-15
卷号769页码:218-225
关键词Thermoelectrics Cu2GeSe3 Precipitates Alloying Doping
ISSN号0925-8388
DOI10.1016/j.jallcom.2018.07.318
通讯作者Lu, Xu(luxu@cqu.edu.cn) ; Wang, Guoyu(guoyuw@cigit.ac.cn)
英文摘要An enhancement on thermoelectric performance of Cu2GeSe3 via simultaneously Ag-alloying on Cu sites and Ga-doping on Ge sites is achieved. The relatively high solubility (similar to 10%) of Ag on Cu sites allows for the strong point defect scattering for phonons, which causes remarkable reduction in lattice thermal conductivity. Ag-rich precipitates emerge when the amount of Ag is higher than the solubility on Cu site, which however do not have significant effect on the lattice thermal conductivity since it is already very close to the lower limit of kinetic theory. Ga-doping, an effective way to tune the hole concentration, leads to optimization of power factor in the whole temperature range. The maximal zT obtained in Cu1.9Ag0.1Ge0.997Ga0.003Se3 is 1.03@786 K, about 58% higher than that in previous report. In addition, the average zT in the temperature range from 320 K to 786 K is 0.58, implying great potential for fabrication of thermoelectric devices. (c) 2018 Elsevier B.V. All rights reserved.
资助项目National Natural Science Foundation of China[51672270] ; National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[11404044] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016] ; Project for Fundamental and Frontier Research in Chongqing[CSTC2015JCYJBX0026]
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000449481200027
出版者ELSEVIER SCIENCE SA
源URL[http://119.78.100.138/handle/2HOD01W0/7023]  
专题机器人与3D打印技术创新中心
通讯作者Lu, Xu; Wang, Guoyu
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
2.Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
3.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100044, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Ruifeng,Li, Ang,Huang, Tianyu,et al. Enhanced thermoelectric performance in Cu2GeSe3 via (Ag,Ga)-co-doping on cation sites[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,769:218-225.
APA Wang, Ruifeng.,Li, Ang.,Huang, Tianyu.,Zhang, Bin.,Peng, Kunling.,...&Wang, Guoyu.(2018).Enhanced thermoelectric performance in Cu2GeSe3 via (Ag,Ga)-co-doping on cation sites.JOURNAL OF ALLOYS AND COMPOUNDS,769,218-225.
MLA Wang, Ruifeng,et al."Enhanced thermoelectric performance in Cu2GeSe3 via (Ag,Ga)-co-doping on cation sites".JOURNAL OF ALLOYS AND COMPOUNDS 769(2018):218-225.

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来源：重庆绿色智能技术研究院

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