A novel Cu₃BiS₃ nanorods film was prepared by a facile dip-coating method and its compositional, structural and optoelectronic properties were systematically characterized. A possible reaction mechanism of Cu₃BiS₃ was also discussed briefly. Optical absorption investigation revealed that Cu₃BiS₃ nanorods film has a direct band gap of 1.46 eV. Photoelectrochemistry of hydrazine free unannealed film displays a strong p-type photoresponse, as high as ∼1.0 × 10⁻⁴ A/cm⁻² at an applied potential of −0.5 V versus Ag/AgCl under the visible light irradiation. The photocurrent response measurement on the Cu₃BiS₃ nanorods film sheds light on the potential application as a low-cost, high-reproducibility and high-yield nanorods preparing approach towards efficient Cu₃BiS₃ photoelectricity and photovoltaic materials.