This report presents a pressure-induced permanent metallization for MoSunder non-hydrostatic conditions. Impedance and Raman spectra were measured to study the pressure-induced structural and electronic transformations of MoSat up to 0025 GPa in diamond anvil cells under both non-hydrostatic and hydrostatic conditions. The results show evidence for isostructural hexagonal distortion from 2Hc to 2Ha and metallization at 0017 GPa and 0020 GPa under non-hydrostatic and hydrostatic conditions, respectively. Interestingly, the metallization is irreversible only under non-hydrostatic compression. We attribute this phenomenon to the incorporation of molecules of pressure medium between layers, which mitigate compressed stress and reduce interlayer interaction.