Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems
文献类型：期刊论文
| 作者 | W. Xu ; P. A. Folkes ; Godfrey Gumbs |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2007 |
| 期号 | 102 |
| 合作状况 | 其它 |
| 收录类别 | 其他 |
| 语种 | 中文 |
| 公开日期 | 2010-07-16 ; 2011-07-12 |
| 源URL | [http://ir.hfcas.ac.cn/handle/334002/3632]  |
| 专题 | 合肥物质科学研究院_中科院固体物理研究所 |
| 推荐引用方式 GB/T 7714 | W. Xu,P. A. Folkes,Godfrey Gumbs. Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems[J]. journal of applied physics,2007(102). |
| APA | W. Xu,P. A. Folkes,&Godfrey Gumbs.(2007).Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems.journal of applied physics(102). |
| MLA | W. Xu,et al."Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems".journal of applied physics .102(2007). |
入库方式： OAI收割
来源：合肥物质科学研究院
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