中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth behavior of GaN film along non-polar [11-20] directions

文献类型:期刊论文

作者Xu K (徐科); Gong XJ (弓晓晶); Zhang JP(张锦平); Li FB(边历峰); Yang H (杨辉); Wang JF(王建峰)
刊名Physica B-Condensed Matter
出版日期2011
卷号406期号:1
关键词Gallium nitride Growth behavior
通讯作者Xu K (徐科)
合作状况其它
英文摘要 We studied the atomic assembly mechanisms of non-polar GaN films by the molecular dynamics method as a function of the N:Ga flux ratio at a fixed adatom energy on non-polar planes. Our study revealed that high quality crystal growth occurred only when off-lattice atoms (which are usually associated with amorphous embryos or defect complexes) formed during deposition were able to move to unoccupied lattice sites by thermally activated diffusion processes, which attests to the experimental difficulties in obtaining smooth surfaces due to dense stacking faults lying in non-polar GaN. Furthermore, surface structures on different planes played an important role. We further suggested favorable conditions for growing high quality GaN films and nano-structures along non-polar directions.
收录类别SCI
语种英语
WOS记录号WOS:000285212200007
公开日期2011-03-11
源URL[http://58.210.77.100/handle/332007/317]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
通讯作者Xu K (徐科)
推荐引用方式
GB/T 7714
Xu K ,Gong XJ ,Zhang JP,et al. Growth behavior of GaN film along non-polar [11-20] directions[J]. Physica B-Condensed Matter,2011,406(1).
APA Xu K ,Gong XJ ,Zhang JP,Li FB,Yang H ,&Wang JF.(2011).Growth behavior of GaN film along non-polar [11-20] directions.Physica B-Condensed Matter,406(1).
MLA Xu K ,et al."Growth behavior of GaN film along non-polar [11-20] directions".Physica B-Condensed Matter 406.1(2011).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

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