Growth behavior of GaN film along non-polar [11-20] directions
文献类型：期刊论文
| 作者 | Xu K (徐科) ; Gong XJ (弓晓晶); Zhang JP(张锦平); Li FB(边历峰); Yang H (杨辉); Wang JF(王建峰)
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| 刊名 | Physica B-Condensed Matter
 |
| 出版日期 | 2011 |
| 卷号 | 406期号:1 |
| 关键词 | Gallium nitride Growth behavior |
| 通讯作者 | Xu K (徐科) |
| 合作状况 | 其它 |
| 英文摘要 | We studied the atomic assembly mechanisms of non-polar GaN films by the molecular dynamics method as a function of the N:Ga flux ratio at a fixed adatom energy on non-polar planes. Our study revealed that high quality crystal growth occurred only when off-lattice atoms (which are usually associated with amorphous embryos or defect complexes) formed during deposition were able to move to unoccupied lattice sites by thermally activated diffusion processes, which attests to the experimental difficulties in obtaining smooth surfaces due to dense stacking faults lying in non-polar GaN. Furthermore, surface structures on different planes played an important role. We further suggested favorable conditions for growing high quality GaN films and nano-structures along non-polar directions. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000285212200007 |
| 公开日期 | 2011-03-11 |
| 源URL | [http://58.210.77.100/handle/332007/317]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu K (徐科) |
| 推荐引用方式 GB/T 7714 | Xu K ,Gong XJ ,Zhang JP,et al. Growth behavior of GaN film along non-polar [11-20] directions[J]. Physica B-Condensed Matter,2011,406(1). |
| APA | Xu K ,Gong XJ ,Zhang JP,Li FB,Yang H ,&Wang JF.(2011).Growth behavior of GaN film along non-polar [11-20] directions.Physica B-Condensed Matter,406(1). |
| MLA | Xu K ,et al."Growth behavior of GaN film along non-polar [11-20] directions".Physica B-Condensed Matter 406.1(2011). |
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