GaN powders from ammonolysis: Preparation, structure, morphology, and optical properties
文献类型：期刊论文
| 作者 | Zhang JP (张锦平) ; Li J
|
| 刊名 | Solid State Sciences
 |
| 出版日期 | 2011-01 |
| 卷号 | 13期号:1页码:216-223 |
| 关键词 | GaN Ammonolysis X-ray line-broadening Rietveld Photoluminescence |
| 通讯作者 | Kim, YI |
| 合作状况 | 其它 |
| 英文摘要 | Despite numerous advances in the preparation and use of GaN and its substituted variants as thin films, and their many leading-edge applications in lighting technologies, the preparation of high-quality bulk GaN powder remains a challenge. Ammonolytic preparations of polycrystalline GaN have been studied and are reported here using various precursors, namely, elemental Ga, Ga2O3, GaOOH, (NH4)(3)GaF6, Ga (NO3)(3)center dot xH(2)O, Ga(CH3COCHCOCH3)(3). Of these, elemental Ga is found to be the most useful for achieving a high crystallinity wurtzite GaN product with superior photoluminescence properties. Nitridation of Ga, aided by catalytic Bi powder, results in gray GaN phase (denoted as GaN-i) with an optical band gap of 3.31 eV at 295 K. The GaN products obtained from other starting materials are, in contrast, beige to light yellow and display wider band gaps. Rietveld refinements show that the wurtzite lattice constants of GaN-i are smallest amongst the GaN samples prepared here, presumably due to having the lowest oxygen content as indicated by energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS). Williamson-Hall analysis, scanning electron microscopy, transmission electron microscopy, and photoluminescence measurements reveal that GaN-i samples consist of distinctly larger crystallites and exhibits better-defined band edge emissions when compared to the phases derived from compound precursors. In addition to pointing out strategies to better GaN products, this contribution also suggests various figures of merit for high-quality polycrystalline GaN. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000287286000036 |
| 公开日期 | 2011-03-11 |
| 源URL | [http://58.210.77.100/handle/332007/327]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Zhang JP ,Li J. GaN powders from ammonolysis: Preparation, structure, morphology, and optical properties[J]. Solid State Sciences,2011,13(1):216-223. |
| APA | Zhang JP ,&Li J.(2011).GaN powders from ammonolysis: Preparation, structure, morphology, and optical properties.Solid State Sciences,13(1),216-223. |
| MLA | Zhang JP ,et al."GaN powders from ammonolysis: Preparation, structure, morphology, and optical properties".Solid State Sciences 13.1(2011):216-223. |
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