Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD
文献类型：期刊论文
| 作者 | Qiu YX (邱永鑫) ; Huang J (黄俊); Xu K (徐科)
|
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2010-12-01 |
| 卷号 | 257期号:4页码:1181-1184 |
| 关键词 | Semiconductors Thin films Surfaces Luminescence Nonpolar GaN |
| 通讯作者 | Zhou, SM |
| 合作状况 | 其它 |
| 英文摘要 | Single crystalline wurtzite a-plane GaN films were deposited on (3 0 2) LiAlO2 (LAO) substrates by metal organic chemical vapor deposition (MOCVD). The high resolution X-ray diffraction (HRXRD) results and selected area electron diffraction (SAED) patterns in cross section indicated that the crystallographic orientation between LAO and wurtzite GaN was: [3 0 2](LAO) parallel to [1 1 (2) over bar 0](GaN), [(2) over bar 0 3](LAO) parallel to [1 (1) over bar 0 0](GaN) and [0 1 0](LAO) parallel to [0 0 0 1](GaN), the mismatches were -4.43%, -2.86% and -0.31%, respectively. When the incident beam parallel (or perpendicular) to the [0 0 0 1] direction of GaN, the FWHM values of omega-scans reached the minimum (or maximum). The a-GaN film was found to have steps along [1 0 (1) over bar 0] direction and strips coalesced parallel to [0 0 0 1] direction. The PL intensity of the emission peak around 364 nm reduced a lot when the polarization changed from E perpendicular to c to E parallel to c. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000282155700006 |
| 公开日期 | 2011-03-13 |
| 源URL | [http://58.210.77.100/handle/332007/355]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Qiu YX ,Huang J ,Xu K . Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD[J]. Applied Surface Science,2010,257(4):1181-1184. |
| APA | Qiu YX ,Huang J ,&Xu K .(2010).Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD.Applied Surface Science,257(4),1181-1184. |
| MLA | Qiu YX ,et al."Anisotropic characteristics of a-plane GaN films grown on gamma-LiAlO2 (302) substrates by MOCVD".Applied Surface Science 257.4(2010):1181-1184. |
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