中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys

文献类型:期刊论文

作者Yang H (杨辉); Xu K (徐科); Shi L (石林)
刊名Journal of Applied Physics
出版日期2009-12-01
卷号106期号:11
关键词ab initio calculations crystal structure energy gap gallium compounds high-pressure effects III-V semiconductors indium compounds valence bands wide band gap semiconductors
通讯作者Shi L (石林)
合作状况其它
英文摘要Using the first-principle methods, we investigate the structural and electronic properties of the wurtzite InxGa1-xN (0 < x < 1) alloys under hydrostatic pressure. We find that the pressure coefficient decreases with the In concentration and becomes constant when the In concentration is higher than some critical value, which is in agreement with experimental results. Our calculations demonstrate that the axial ratio c/a of InxGa1-xN increases with the hydrostatic pressure when x < 0.25, while it decreases when x>0.25. The densities of p(x) and p(y) orbitals are higher than that of p(z) orbital at the valence band top. This anisotropy induces the pronounced bowing of the pressure coefficient.
收录类别SCI ; EI
语种英语
WOS记录号WOS:000272838600029
公开日期2011-03-14
源URL[http://58.210.77.100/handle/332007/377]  
专题苏州纳米技术与纳米仿生研究所_测试分析平台
通讯作者Shi L (石林)
推荐引用方式
GB/T 7714
Yang H ,Xu K ,Shi L . Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys[J]. Journal of Applied Physics,2009,106(11).
APA Yang H ,Xu K ,&Shi L .(2009).Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys.Journal of Applied Physics,106(11).
MLA Yang H ,et al."Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys".Journal of Applied Physics 106.11(2009).

入库方式: OAI收割

来源:苏州纳米技术与纳米仿生研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。