Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys
文献类型：期刊论文
| 作者 | Yang H (杨辉) ; Xu K (徐科); Shi L (石林)
|
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2009-12-01 |
| 卷号 | 106期号:11 |
| 关键词 | ab initio calculations crystal structure energy gap gallium compounds high-pressure effects III-V semiconductors indium compounds valence bands wide band gap semiconductors |
| 通讯作者 | Shi L (石林) |
| 合作状况 | 其它 |
| 英文摘要 | Using the first-principle methods, we investigate the structural and electronic properties of the wurtzite InxGa1-xN (0 < x < 1) alloys under hydrostatic pressure. We find that the pressure coefficient decreases with the In concentration and becomes constant when the In concentration is higher than some critical value, which is in agreement with experimental results. Our calculations demonstrate that the axial ratio c/a of InxGa1-xN increases with the hydrostatic pressure when x < 0.25, while it decreases when x>0.25. The densities of p(x) and p(y) orbitals are higher than that of p(z) orbital at the valence band top. This anisotropy induces the pronounced bowing of the pressure coefficient. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000272838600029 |
| 公开日期 | 2011-03-14 |
| 源URL | [http://58.210.77.100/handle/332007/377]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Shi L (石林) |
| 推荐引用方式 GB/T 7714 | Yang H ,Xu K ,Shi L . Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys[J]. Journal of Applied Physics,2009,106(11). |
| APA | Yang H ,Xu K ,&Shi L .(2009).Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys.Journal of Applied Physics,106(11). |
| MLA | Yang H ,et al."Influence of the electronic states anisotropy on the band gap pressure coefficient of InxGa1-xN alloys".Journal of Applied Physics 106.11(2009). |
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