High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers
文献类型：会议论文
| 作者 | Hu XJ (胡晓剑) ; Xu K (徐科); Yang H (杨辉); Wang JF (王建峰); Xu Y (徐俞)
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| 出版日期 | 2009-05-01 |
| 会议名称 | 2nd International Symposium on Growth of III Nitrides (ISGN-2) |
| 会议日期 | JUL 07-09, 2008 |
| 会议地点 | Laforet Shuzenji, JAPAN |
| 关键词 | High-resolution X-ray diffraction (HR-XRD) Kaganer model Modified Kaganer model Mosaic model Threading dislocation density Hydride vapor phase epitaxy (HVPE) |
| 卷号 | 311 |
| 期号 | 10 |
| 页码 | 3080-3084 |
| 通讯作者 | Xu K (徐科) |
| 英文摘要 | The threading dislocation density of hydride vapor phase epitaxy (HVPE)-grown thick GaN layers was measured by high-resolution X-ray diffraction (HR-XRD). Three models were compared, namely mosaic model, Kaganer model and modified Kaganer model. X-ray rocking curves (XRC) of (0 0 0 2), (1 0 (1) over bar 5), (1 0 (1) over bar 4), (1 0 (1) over bar 3),(1 0 (1) over bar 2), (1 0 (1) over bar 1) and (1 0 (1) over bar 0) planes were recorded for quantitative analysis. The screw-, edge-, and mixed-type threading dislocation densities were simulated from the XRD line profile by using the three models. The dislocation density was also measured by atomic force microscopy (AFM), wet chemical etching and cathodoluminescence (CL). The results showed that the Kaganer model was more physically precise and well explained the rocking curve broadening for HVPE-grown high-quality GaN compared with the mosaic model. Assuming a randomly distributed threading dislocation configuration, we modified the Kaganer model. Based on the modified Kaganer model, the edge and screw threading dislocation densities in HVPE-grown GaN thick films ranging from 20 Pm up to 700 mu m were analyzed. It was shown that screw-type dislocation density decreased more rapidly than edge-type dislocation with increase in film thickness. (C) 2009 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI ; CPCI（ISTP） ; EI |
| 合作状况 | 其它 |
| 会议录 | Journal of Crystal Growth
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| 语种 | 英语 |
| WOS记录号 | WOS:000267302900079 |
| 源URL | [http://58.210.77.100/handle/332007/380]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu K (徐科) |
| 推荐引用方式 GB/T 7714 | Hu XJ ,Xu K ,Yang H ,et al. High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers[C]. 见:2nd International Symposium on Growth of III Nitrides (ISGN-2). Laforet Shuzenji, JAPAN. JUL 07-09, 2008. |
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