Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform
文献类型：期刊论文
| 作者 | Zhang BS(张宝顺) ; Lin WK (林文魁); Cai Y (蔡勇)
|
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2009-10 |
| 卷号 | 30期号:10页码:1045-1047 |
| 关键词 | Accelerometer gallium nitride (GaN) microelectromechanical system (MEMS) piezosensitivity sensor |
| 通讯作者 | Lv J |
| 合作状况 | 其它 |
| 英文摘要 | In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform. The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed. A microaccelerometer structure with a 250 x 250-mu m(2) proof-mass area is fabricated with the proposed fabrication technique, and the piezoresponse properties of the integrated sensing elements are characterized through bending experiment. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000270227600011 |
| 公开日期 | 2010-01-15 |
| 源URL | [http://58.210.77.100/handle/332007/142]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Zhang BS,Lin WK ,Cai Y . Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform[J]. IEEE ELECTRON DEVICE LETTERS,2009,30(10):1045-1047. |
| APA | Zhang BS,Lin WK ,&Cai Y .(2009).Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform.IEEE ELECTRON DEVICE LETTERS,30(10),1045-1047. |
| MLA | Zhang BS,et al."Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform".IEEE ELECTRON DEVICE LETTERS 30.10(2009):1045-1047. |
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