Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring
文献类型：会议论文
| 作者 | Zhang BS (张宝顺) ; Yang H (杨辉); Xu K (徐科); Zhang YM (张育民); Hu XJ (胡晓剑); Xu Y (徐俞); Wang JF (王建峰); Wang HB (王怀兵)
|
| 出版日期 | 2009-05-01 |
| 会议名称 | 2nd International Symposium on Growth of III Nitrides (ISGN-2) |
| 会议日期 | JUL 07-09, 2008 |
| 会议地点 | Laforet Shuzenji, JAPAN |
| 关键词 | Hydride vapor phase epitaxy Nitrides |
| 卷号 | 311 |
| 期号 | 10 |
| 页码 | 3033-3036 |
| 通讯作者 | Xu K (徐科) |
| 英文摘要 | An in-situ optical monitoring system made in our laboratory is set up on the horizontal hydride vapor phase epitaxy (HVPE) equipment. From the growth rate information provided by this system, some basic growth parameters are optimized and high-quality GaN layers are grown. The growth stress of the HVPE GaN layer grown on different templates is also examined through the in-situ optical measuring. |
| 收录类别 | SCI ; CPCI（ISTP） ; EI |
| 合作状况 | 其它 |
| 会议录 | Journal of Crystal Growth
 |
| 语种 | 英语 |
| WOS记录号 | WOS:000267302900069 |
| 源URL | [http://58.210.77.100/handle/332007/375]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 通讯作者 | Xu K (徐科) |
| 推荐引用方式 GB/T 7714 | Zhang BS ,Yang H ,Xu K ,et al. Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring[C]. 见:2nd International Symposium on Growth of III Nitrides (ISGN-2). Laforet Shuzenji, JAPAN. JUL 07-09, 2008. |
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