Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Shi K ; Jiao CM; Song HP
|
| 刊名 | applied surface science
 |
| 出版日期 | 2011 |
| 卷号 | 257期号:18页码:8110-8112 |
| 关键词 | Valence band offset GaN/diamond heterojunction XPS Conduction band offset CHEMICAL-VAPOR-DEPOSITION ALGAN/GAN HEMTS DIAMOND GAN FILMS |
| ISSN号 | 0169-4332 |
| 通讯作者 | shi, k, 35 tsinghua e rd, beijing 100083, peoples r china. shikai@semi.ac.cn ; xlliu@semi.ac.cn ; lidb@ciomp.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | 863 high technology r&d program of china [2007aa03z402, 2007aa03z451]; special funds for major state basic research project (973 program) of china [2006cb604907]; national science foundation of china [60506002, 60776015] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | xps was used to measure the energy discontinuity in the gan/diamond heterostructure. the valence band offset (vbo) was determined to be 0.38 +/- 0.15 ev and a type-ii heterojunction with a conduction band offset (cbo) of 2.43 +/- 0.15 ev was obtained. (c) 2011 elsevier b.v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21227]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Shi K,Jiao CM,Song HP. Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy[J]. applied surface science,2011,257(18):8110-8112. |
| APA | Shi K,Jiao CM,&Song HP.(2011).Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy.applied surface science,257(18),8110-8112. |
| MLA | Shi K,et al."Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy".applied surface science 257.18(2011):8110-8112. |
入库方式： OAI收割
来源：半导体研究所
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