Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Wei HY
|
| 刊名 | applied physics a-materials science & processing
 |
| 出版日期 | 2011 |
| 卷号 | 103期号:4页码:1099-1103 |
| 关键词 | SENSITIZED SOLAR-CELLS PHOTOCATALYZED TRANSFORMATION CHLOROAROMATIC DERIVATIVES ZINC-OXIDE FILMS POWDER PHENOL |
| ISSN号 | 0947-8396 |
| 通讯作者 | liu, xl, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china. xlliu@semi.ac.cn ; why@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national science foundation of china [60776015]; special funds for major state basic research project (973 program) of china [2006cb604907]; 863 high technology r&d program of china [2007aa03z402, 2007aa03z451] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | the valence-band offset of the wurtzite zno/rutile tio2 heterojunction was directly determined by x-ray photoelectron spectroscopy. the wurtzite zno (0001) layer was grown on commercial rutile (101) tio2 by metal-organic chemical-vapor deposition. the results show that the valence-band offset is 0.14 +/- 0.05 ev, which agrees well with previous results by other methods. therefore, the conduction-band offset is deduced from their known band-gap energy values to be 0.45 +/- 0.05 ev, which indicates a type-ii band alignment for the zno/tio2 heterojunction. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21229]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Wei HY. Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy[J]. applied physics a-materials science & processing,2011,103(4):1099-1103. |
| APA | Wei HY.(2011).Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy.applied physics a-materials science & processing,103(4),1099-1103. |
| MLA | Wei HY."Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy".applied physics a-materials science & processing 103.4(2011):1099-1103. |
入库方式： OAI收割
来源：半导体研究所
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