Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
文献类型：期刊论文
| 作者 | Song HP ; Wei HY; Li CM; Jiao CM
|
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2011 |
| 卷号 | 6页码:article no.69 |
| 关键词 | CATHODOLUMINESCENCE CHARACTERIZATION GALLIUM NITRIDE STRESSES LAYERS HETEROSTRUCTURE DEPOSITION CONSTANTS MECHANISM SAPPHIRE STRAIN |
| ISSN号 | 1931-7573 |
| 通讯作者 | liu, jm, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. liujianming@semi.ac.cn ; xlliu@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national science foundation of china [60776015, 60976008]; special funds for major state basic research project (973 program) of china [2006 cb604907]; 863 high technology r&d program of china [2007aa03z402, 2007aa03z451] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | cracks appeared in gan epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (mocvd) and hydride vapor-phase epitaxy (hvpe) in one chamber. the origin of cracks in a 22-mu m thick gan film was fully investigated by high-resolution x-ray diffraction (xrd), micro-raman spectra, and scanning electron microscopy (sem). many cracks under the surface were first observed by sem after etching for 10 min. by investigating the cross section of the sample with high-resolution micro-raman spectra, the distribution of the stress along the depth was determined. from the interface of the film/substrate to the top surface of the film, several turnings were found. a large compressive stress existed at the interface. the stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. then it went down again, and it finally increased near the top surface. the cross-section of the film was observed after cleaving and etching for 2 min. it was found that the crystal quality of the healed part was nearly the same as the uncracked region. this indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. moreover, the cracks would heal because of high lateral growth rate. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21233]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Song HP,Wei HY,Li CM,et al. Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method[J]. nanoscale research letters,2011,6:article no.69. |
| APA | Song HP,Wei HY,Li CM,&Jiao CM.(2011).Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method.nanoscale research letters,6,article no.69. |
| MLA | Song HP,et al."Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method".nanoscale research letters 6(2011):article no.69. |
入库方式： OAI收割
来源：半导体研究所
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