Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
文献类型：期刊论文
| 作者 | Zhou GY ; Zhang HY; Xu B; Ye XL
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:8页码:article no.83501 |
| 关键词 | INAS ISLANDS MU-M ESCAPE GAAS GAAS(100) SUBSTRATE |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhou, xl, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china. zhouxl06@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [60625402, 60990313]; 973 program [2006cb604908, 2006cb921607] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | considering the direct quantum tunneling of carrier, we propose a new carrier rate equation model to simulate the temperature dependent photoluminescence (tdpl) of inas/gaas quantum dots (qds). the tdpl showed abnormal variations: the peak rapid redshift, linewidth shrinkage, and thermal activation energy all decreased with increasing tunneling strength. a criterion, which could be used to evaluate the tunneling strength, has been developed. that is, smaller tunneling strength coefficient a indicates higher carrier tunneling strength. meanwhile, the criterion is also demonstrated via comparative experimental results of inas qds grown on different patterned gaas substrates. it is found that, to some extent, the tunneling strength would be enhanced by decreasing the dot-dot distance for closely arranged qds ensembles. (c) 2011 american institute of physics. [doi:10.1063/1.3572238] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21241]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou GY,Zhang HY,Xu B,et al. Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment[J]. journal of applied physics,2011,109(8):article no.83501. |
| APA | Zhou GY,Zhang HY,Xu B,&Ye XL.(2011).Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment.journal of applied physics,109(8),article no.83501. |
| MLA | Zhou GY,et al."Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment".journal of applied physics 109.8(2011):article no.83501. |
入库方式： OAI收割
来源：半导体研究所
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