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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
文献类型：期刊论文
| 作者 | Lv YJ ; Lin ZJ ; Corrigan TD ; Zhao JZ ; Cao ZF ; Meng LG ; Luan CB ; Wang ZG ; Chen H |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:7页码:article no.74512 |
| 关键词 | FIELD-EFFECT TRANSISTORS GAN DEPENDENCE CONTACTS STATES NI |
| ISSN号 | 0021-8979 |
| 通讯作者 | lv, yj, shandong univ, sch phys, jinan 250100, peoples r china. linzj@sdu.edu.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [10774090]; national basic research program of china [2007cb936602] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | ni schottky contacts on algan/gan heterostructures have been fabricated, and one of the prepared samples has been annealed at 700 degrees c for half an hour. the barrier heights for the prepared samples were measured by internal photoemission. based on the measured forward current-voltage (i-v) characteristics and using the two-diode model, the ni schottky barrier height at zero bias has been analyzed and calculated by self-consistently solving schrodinger's and poisson's equations, and the correlation expression between the barrier height at zero electric field and that at zero bias has been derived for schottky contacts on algan/gan heterostructures. the calculated schottky barrier heights corresponding to zero electric field for the prepared ni schottky contacts on algan/gan heterostructures agree well with the photocurrent measured results. thus, the method for extraction of algan/gan heterostructure schottky barrier heights from forward i-v characteristics is developed and determined. (c) 2011 american institute of physics. [doi: 10.1063/1.3569594] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21247]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Lv YJ,Lin ZJ,Corrigan TD,et al. Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics[J]. journal of applied physics,2011,109(7):article no.74512. |
| APA | Lv YJ.,Lin ZJ.,Corrigan TD.,Zhao JZ.,Cao ZF.,...&Chen H.(2011).Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics.journal of applied physics,109(7),article no.74512. |
| MLA | Lv YJ,et al."Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics".journal of applied physics 109.7(2011):article no.74512. |
入库方式： OAI收割
来源：半导体研究所
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