Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
文献类型：期刊论文
| 作者 | Lu YJ ; Lin ZJ ; Zhang Y ; Meng LG ; Cao ZF ; Luan CB ; Chen H ; Wang ZG |
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:4页码:article no.47105 |
| 关键词 | AlGaN/GaN heterostructures thermal stressing polarization self-consistently solving Schrodinger's and Poisson's equations FIELD-EFFECT TRANSISTORS POLARIZATION STABILITY CHARGE GAN |
| ISSN号 | 1009-1963 |
| 通讯作者 | lin, zj, shandong univ, sch phys, jinan 250100, peoples r china. linzj@sdu.edu.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [10774090]; national basic research program of china [2007cb936602] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | ni schottky contacts on algan/gan heterostructures have been fabricated. the samples are then thermally treated in a furnace with n-2 ambient at 600 degrees c for different times (0.5, 4.5, 10.5, 18, 33, 48 and 72 h). current voltage (i-v) and capacitance voltage (c-v) relationships are measured, and schrodinger's and poisson's equations are self-consistently solved to obtain the characteristic parameters related to algan/gan heterostructure schottky contacts: the two-dimensional electron gas (2deg) sheet density, the polarization sheet charge density, the 2deg distribution in the triangle quantum well and the schottky barrier height for each thermal stressing time. most of the above parameters reduce with the increase of stressing time, only the parameter of the average distance of the 2deg from the algan/gan interface increases with the increase of thermal stressing time. the changes of the characteristic parameters can be divided into two stages. in the first stage the strain in the algan barrier layer is present. in this stage the characteristic parameters change rapidly compared with those in the second stage in which the algan barrier layer is relaxed and no strain is present. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21251]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Lu YJ,Lin ZJ,Zhang Y,et al. Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts[J]. chinese physics b,2011,20(4):article no.47105. |
| APA | Lu YJ.,Lin ZJ.,Zhang Y.,Meng LG.,Cao ZF.,...&Wang ZG.(2011).Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts.chinese physics b,20(4),article no.47105. |
| MLA | Lu YJ,et al."Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts".chinese physics b 20.4(2011):article no.47105. |
入库方式： OAI收割
来源：半导体研究所
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