中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres

文献类型:期刊论文

作者Ni XW ; Hu XJ ; Zhou SY ; Sun CH ; Bai XX ; Chen P
刊名polymers for advanced technologies
出版日期2011
卷号22期号:5页码:532-537
关键词conducting polymers hollow microspheres microwave absorbing properties poly(3,4-ethylenedioxythiophene) (PEDOT) POLY 3,4-ETHYLENEDIOXYTHIOPHENE CORE-SHELL HOLLOW POLYMERIZATION POLYANILINE SURFACE ELECTROCHEMISTRY POLYTHIOPHENES NANOPARTICLES DISPERSION
ISSN号1042-7147
通讯作者hu, xj, chinese acad sci, key lab photochem convers & optoelect mat, tech inst phys & chem, beijing 100190, peoples r china. huxiujie@mail.ipc.ac.cn ; zhou_shuyun@mail.ipc.ac.cn
学科主题半导体材料
收录类别SCI
资助信息national natural science foundation of china [20874112, 60808022]
语种英语
公开日期2011-07-05 ; 2011-07-15
附注poly(3,4-ethylenedioxythiophene) (pedot) solid and hollow microspheres were successfully synthesized by simply adjusting the concentration of 3,4-ethylenedioxythiophene (edot) and the molar ratio of edot to ammonium persulfate (aps) (represented by (edot)/(aps)), respectively. microwave absorbing properties of pedot microspheres with tunable reflection loss (rl) and microwave frequency band were described in detail. the relationships between the conductivity and rl of pedot microspheres were also discussed. copyright (c) 2010 john wiley & sons, ltd.
源URL[http://ir.semi.ac.cn/handle/172111/21257]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Ni XW,Hu XJ,Zhou SY,et al. Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres[J]. polymers for advanced technologies,2011,22(5):532-537.
APA Ni XW,Hu XJ,Zhou SY,Sun CH,Bai XX,&Chen P.(2011).Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres.polymers for advanced technologies,22(5),532-537.
MLA Ni XW,et al."Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres".polymers for advanced technologies 22.5(2011):532-537.

入库方式: OAI收割

来源:半导体研究所

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