Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
文献类型：期刊论文
| 作者 | Yang T
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:6页码:article no.64320 |
| 关键词 | PHOTOLUMINESCENCE EMISSION INALAS |
| ISSN号 | 0021-8979 |
| 通讯作者 | yang, t, chinese acad sci, inst semicond, key lab semicond mat, pob 912, beijing 100083, peoples r china. tyang@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | chinese academy of sciences ; national science foundation of china [60876033, 61076050, 61021003] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we theoretically studied the role of a ingaas and inalas strain-reducing layer (srl) with different thicknesses and indium compositions covered on inas/gaas self-assembled quantum dots (qds). the ground-state transition wavelength increases as the thickness and indium composition of the srl increase. the energy separation between ground state and excited state can achieve the maximum by a proper design. the redshift is due to (1) the strain reducing in qd, (2) the potential barrier, and (3) effective mass reducing in srl, but the latter two tend to cancel each other and the energy level separation is mainly determined by (2) and (3). (c) 2011 american institute of physics. [doi:10.1063/1.3553443] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21265]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yang T. Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer[J]. journal of applied physics,2011,109(6):article no.64320. |
| APA | Yang T.(2011).Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer.journal of applied physics,109(6),article no.64320. |
| MLA | Yang T."Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer".journal of applied physics 109.6(2011):article no.64320. |
入库方式： OAI收割
来源：半导体研究所
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