Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design
文献类型：期刊论文
| 作者 | Cao YL ; Yang T
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:4页码:article no.44201 |
| ISSN号 | 0256-307x |
| 关键词 | WELL LASERS DEPENDENCE DIODE GAIN |
| 通讯作者 | xu, pf, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. tyang@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 资助信息 | chinese academy of sciences ; national natural science foundation of china [60876033, 61076050, 61021003] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we demonstrate a technique of temperature compensation for 1.3 mu m inas/gaas quantum-dot (qd) lasers by facet coating design. the key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises. to realize this, we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480 nm, whose reflectivity increases as the emission wavelength of the lasers red-shifts. consequently, the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10 degrees c to 70 degrees c, compared with the traditional one with a temperature-independent mirror loss. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21267]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Cao YL,Yang T. Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design[J]. chinese physics letters,2011,28(4):article no.44201. |
| APA | Cao YL,&Yang T.(2011).Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design.chinese physics letters,28(4),article no.44201. |
| MLA | Cao YL,et al."Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design".chinese physics letters 28.4(2011):article no.44201. |
入库方式： OAI收割
来源：半导体研究所
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