Enhancement of light trapping in thin-film solar cells through Ag
文献类型:期刊论文
| 作者 | Zhang H ; Yin ZG ; Zhang XW ; Huang TM
|
| 刊名 | chinese optics letters
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| 出版日期 | 2011 |
| 卷号 | 9期号:3页码:article no.32901 |
| 关键词 | ABSORPTION |
| ISSN号 | 1671-7694 |
| 通讯作者 | bai, ym, n china. elect power univ, beijing key lab new & renewable energy, beijing 102206, peoples r china. ymbai@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | natural science foundation of beijing [2102042]; national natural science foundation of china [20876040]; fundamental research funds for the central universities [10qg24] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | forward-scattering efficiency (fse) is first proposed when an ag nanoparticle serves as the light-trapping structure for thin-film (tf) solar cells because the ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles. based on fse analysis of ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated. the contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively. when the surface coverage of ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm ag nanoparticles. results indicate that the plasmon quadrupole mode resonance of ag nanoparticles could further enhance the light-trapping effect for tf solar cells. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21271] ![]() |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang H,Yin ZG,Zhang XW,et al. Enhancement of light trapping in thin-film solar cells through Ag[J]. chinese optics letters,2011,9(3):article no.32901. |
| APA | Zhang H,Yin ZG,Zhang XW,&Huang TM.(2011).Enhancement of light trapping in thin-film solar cells through Ag.chinese optics letters,9(3),article no.32901. |
| MLA | Zhang H,et al."Enhancement of light trapping in thin-film solar cells through Ag".chinese optics letters 9.3(2011):article no.32901. |
入库方式: OAI收割
来源:半导体研究所
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