Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
文献类型：期刊论文
| 作者 | Lv YJ ; Lin ZJ ; Zhang Y ; Meng LG ; Luan CB ; Cao ZF ; Chen H ; Wang ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:12页码:article no.123512 |
| 关键词 | 2-DIMENSIONAL ELECTRON-GAS INTERFACIAL LAYER MOBILITY |
| ISSN号 | 0003-6951 |
| 通讯作者 | lin, zj, shandong univ, sch phys, jinan 250100, peoples r china. linzj@sdu.edu.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [10774090]; national basic research program of china [2007cb936602] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | using the measured capacitance-voltage curves of ni schottky contacts with different contact areas and the current-voltage characteristics for the circular and rectangular algan/aln/gan heterostructure field-effect transistors (hfets) at low drain-source voltage, we found that the polarization coulomb field scattering has an important influence on the two-dimensional electron gas (2deg) electron mobility in both the circular and rectangular algan/aln/gan hfets. moreover, the polarization coulomb field scattering in algan/aln/gan heterostructures is relatively weaker compared to that in algan/gan heterostructures, which is attributed to the aln interlayer in algan/aln/gan heterostructures to enlarge the average distance between the 2deg electrons and the polarization charges. (c) 2011 american institute of physics. [doi:10.1063/1.3569138] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21275]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Lv YJ,Lin ZJ,Zhang Y,et al. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. applied physics letters,2011,98(12):article no.123512. |
| APA | Lv YJ.,Lin ZJ.,Zhang Y.,Meng LG.,Luan CB.,...&Wang ZG.(2011).Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.applied physics letters,98(12),article no.123512. |
| MLA | Lv YJ,et al."Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".applied physics letters 98.12(2011):article no.123512. |
入库方式： OAI收割
来源：半导体研究所
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