Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
文献类型：期刊论文
| 作者 | Yu JL ; Chen YH ; Jiang CY ; Liu Y ; Ma H |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:5页码:article no.53519 |
| ISSN号 | 0021-8979 |
| 关键词 | MOLECULAR-BEAM EPITAXY INVERSION ASYMMETRY HETEROSTRUCTURES SEGREGATION INTERFACE |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. yhchen@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 资助信息 | 973 program [2006cb604908, 2006cb921607]; national natural science foundation of china [60625402, 60990313] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | spectra of the interband spin photocurrent due to rashba and dresselhaus spin splittings have been experimentally investigated in ingaas/algaas quantum wells at room temperature. the rashba- and dresselhaus-induced circular photogalvanic effect (cpge) spectra are found to be quite similar in the spectral regions corresponding to the transitions 1e1hh (the first conduction to the first valence sub-band of heavy hole) and 1e2hh. the ratio of rashba- and dresselhaus-induced cpge currents for the transition 1e1hh is estimated to be 4.95. the magnitude of the rashba-induced cpge current is up to several tens of na/w for the transition 1e1hh, which is 1 order of magnitude larger than that obtained in gan/algan superlattices. comparing the cpge spectrum with reflectance-difference and photoreflectance spectra, we find that the large rashba spin splitting is mainly induced by a large indium atom segregation effect and by the internal field in the quantum wells. (c) 2011 american institute of physics. [doi: 10.1063/1.3555099] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21277]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yu JL,Chen YH,Jiang CY,et al. Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells[J]. journal of applied physics,2011,109(5):article no.53519. |
| APA | Yu JL,Chen YH,Jiang CY,Liu Y,&Ma H.(2011).Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells.journal of applied physics,109(5),article no.53519. |
| MLA | Yu JL,et al."Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells".journal of applied physics 109.5(2011):article no.53519. |
入库方式： OAI收割
来源：半导体研究所
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