Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Plumhof JD ; Krapek V ; Ding F ; Jons KD ; Hafenbrak R ; Klenovsky P ; Herklotz A ; Dorr K ; Michler P ; Rastelli A ; Schmidt OG |
| 刊名 | physical review b
 |
| 出版日期 | 2011 |
| 卷号 | 83期号:12页码:article no.121302 |
| 关键词 | ENTANGLED PHOTON PAIRS SEMICONDUCTOR SPIN |
| ISSN号 | 1098-0121 |
| 通讯作者 | plumhof, jd, ifw dresden, inst integrat nanosci, helmholtzstr 20, d-01069 dresden, germanyj.d.plumhof@ifw-dresden.de ; a.rastelli@ifw-dresden.de |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | institutional research program [msm 0021622410]; gacr [ga202/09/0676]; dfg [for730, sfb 787]; bmbf [qk_quahl-rep, 01bq1032] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. we find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (fss) varies nonmonotonically by several tens of mu ev as the strain is varied. these findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable fss critically depends on the orientation of the strain axis relative to the dot elongation. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21279]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Plumhof JD,Krapek V,Ding F,et al. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots[J]. physical review b,2011,83(12):article no.121302. |
| APA | Plumhof JD.,Krapek V.,Ding F.,Jons KD.,Hafenbrak R.,...&Schmidt OG.(2011).Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots.physical review b,83(12),article no.121302. |
| MLA | Plumhof JD,et al."Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots".physical review b 83.12(2011):article no.121302. |
入库方式： OAI收割
来源：半导体研究所
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