Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:2页码:article no.27801 |
| 关键词 | CONTINUOUS-WAVE OPERATION EMISSION LASERS WAVELENGTH EXCITONS ENERGY |
| ISSN号 | 0256-307x |
| 通讯作者 | yang, xr, handan coll, dept phys & elect engn, handan 056005, peoples r china. yangxr1976@126.com |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [60990315]; national basic research program of china [2006cb604904] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | self-assembled inas quantum wires (qwrs) are fabricated on an inp substrate by solid-source molecular beam epitaxy (ssmbe). photoluminescence (pl) spectra are investigated in these nanostructures as a function of temperature. an anomalous enhancement of pl intensity and a temperature insensitive pl emission are observed from inas nanostructures grown on inp substrates using inalgaas as the matrix layer and the origin of this phenomenon is discussed. we attribute the anomalous temperature dependence of photoluminescence to the formation of al-rich and in-rich region in the inalgaas buffer layer and the cap layer. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21291]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xu B. Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures[J]. chinese physics letters,2011,28(2):article no.27801. |
| APA | Xu B.(2011).Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures.chinese physics letters,28(2),article no.27801. |
| MLA | Xu B."Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures".chinese physics letters 28.2(2011):article no.27801. |
入库方式： OAI收割
来源：半导体研究所
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