Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
文献类型：期刊论文
| 作者 | Yin ZG ; Zhang XW; Tan HR; Fan YM; Zhang SG
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:2页码:article no.23716 |
| 关键词 | HIGH-PRESSURE SYNTHESIS VAPOR-DEPOSITION NUCLEATION EMISSION DIAMOND GROWTH |
| ISSN号 | 0021-8979 |
| 通讯作者 | ying, j, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. xwzhang@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china (973 program) [2010cb933803]; national natural science foundation of china [51071145] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | si-doped cubic boron nitride (c-bn) films with various si concentrations were achieved by in situ cosputtering during ion beam assisted deposition. effects of the si concentration and rapid thermal annealing (rta) conditions on the electrical transport properties of si-doped c-bn thin films were investigated systematically. the results suggest that the optimum rta condition is at the temperature of 1000 degrees c for 3 min. the resistance of si-doped c-bn films gradually decreases as the si concentration increases, indicating an electrical doping effect of the si impurity. the temperature dependent electrical conductivity of the si-doped c-bn films suggests that different conduction mechanisms are dominant over the different temperature ranges. based on the davis-mott model, we propose that the extended-state conduction, band tail-state conduction and short-range hopping conduction are responsible for the respective temperature ranges. in addition, the reduction in activation energy of si impurities is observed as the si concentration increases. (c) 2011 american institute of physics. [doi: 10.1063/1.3544065] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21299]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Yin ZG,Zhang XW,Tan HR,et al. Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering[J]. journal of applied physics,2011,109(2):article no.23716. |
| APA | Yin ZG,Zhang XW,Tan HR,Fan YM,&Zhang SG.(2011).Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering.journal of applied physics,109(2),article no.23716. |
| MLA | Yin ZG,et al."Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering".journal of applied physics 109.2(2011):article no.23716. |
入库方式： OAI收割
来源：半导体研究所
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