Surface roughness scattering in two dimensional electron gas channel
文献类型:期刊论文
作者 | Liu B ; Lu YW ; Jin GR ; Zhao Y ; Wang XL ; Zhu QS ; Wang ZG |
刊名 | applied physics letters
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出版日期 | 2010 |
卷号 | 97期号:26页码:article no.262111 |
关键词 | MOLECULAR-BEAM EPITAXY MOBILITY ALGAN/GAN HETEROSTRUCTURES RAY PHOTOEMISSION SPECTROSCOPY PERFORMANCE ALN MODFETS INN |
ISSN号 | 0003-6951 |
通讯作者 | lu, yw, beijing jiaotong univ, dept phys, beijing 100044, peoples r china. ywlu@bjtu.edu.cn ; qszhu@semi.ac.cn |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | national natural science foundation of china [60976070, 60776015, 60976008]; special funds for major state basic research project (973 program) of china [2006cb604907]; 863 high technology r&d program of china [2007aa03z402, 2007aa03z451] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | the mobility of alxga1-xn/gan heterostructure two dimensional electron gas channel limited by surface roughness scattering was calculated considering the strong spontaneous and piezoelectric polarizations in iii-group nitride heterostructure. the electronic mobility on the order of 10(4)-10(5) cm(2) v-1 s(-1) was estimated. we found that the mobility limited by surface roughness scattering is very sensitive to barrier layer thickness fluctuation. (c) 2010 american institute of physics. [doi:10.1063/1.3532967] |
源URL | [http://ir.semi.ac.cn/handle/172111/21317] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Liu B,Lu YW,Jin GR,et al. Surface roughness scattering in two dimensional electron gas channel[J]. applied physics letters,2010,97(26):article no.262111. |
APA | Liu B.,Lu YW.,Jin GR.,Zhao Y.,Wang XL.,...&Wang ZG.(2010).Surface roughness scattering in two dimensional electron gas channel.applied physics letters,97(26),article no.262111. |
MLA | Liu B,et al."Surface roughness scattering in two dimensional electron gas channel".applied physics letters 97.26(2010):article no.262111. |
入库方式: OAI收割
来源:半导体研究所
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