1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process
文献类型：期刊论文
| 作者 | Xu DW ; Yoon SF ; Ding Y ; Tong CZ ; Fan WJ ; Zhao LJ |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2011 |
| 卷号 | 23期号:2页码:91-93 |
| 关键词 | Dielectric-free approach quantum dot (QD) surface-relief technique vertical-cavity surface-emitting lasers (VCSELs) EMITTING LASERS |
| ISSN号 | 1041-1135 |
| 通讯作者 | xu, dw, nanyang technol univ, sch elect & elect engn, singapore 639798, singaporen060085@ntu.edu.sg ; esfyoon@ntu.edu.sg ; yding@ntu.edu.sg ; cztong@ntu.edu.sg ; ewjfan@ntu.edu.sg ; ljzhao@red.semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | a*star singapore-poland [0621200015] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | we present the 1.3-mu m in(ga) as quantum-dot (qd) vertical-cavity surface-emitting lasers (vcsels) fabricated by the dielectric-free (df) approach with the surface-relief (sr) process. compared with the conventional dielectric-dependent (dd) method, the lower differential resistance and improved output power have been achieved by the df approach. with the same oxide aperture area, the differential resistance is reduced by 36.47% and output power is improved by 78.32% under continuous-wave operation; it is up to 3.42 mw under pulsed operation with oxide aperture diameter similar to 15 mu m. the surface-relief technique is also applied, for the first time, in 1.3-mu m qd vcsels, and it effectively enhances the emission of the fundamental mode. the characteristic of small signal modulation response is also analyzed. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21321]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xu DW,Yoon SF,Ding Y,et al. 1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process[J]. ieee photonics technology letters,2011,23(2):91-93. |
| APA | Xu DW,Yoon SF,Ding Y,Tong CZ,Fan WJ,&Zhao LJ.(2011).1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process.ieee photonics technology letters,23(2),91-93. |
| MLA | Xu DW,et al."1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process".ieee photonics technology letters 23.2(2011):91-93. |
入库方式： OAI收割
来源：半导体研究所
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