中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

文献类型:期刊论文

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作者Zhang SG; Zhang XW; Wang JX; You JB; Yin ZG; Dong JJ; Cui B; Wowchak AM; Dabiran AM; Chow PP
刊名physica status solidi-rapid research letters ; PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
出版日期2011 ; 2011
卷号5期号:2页码:74-76
关键词ZnO LED electroluminescence hydrogen-plasma treatment Zno Led Electroluminescence Hydrogen-plasma Treatment
ISSN号1862-6254 ; 1862-6254
通讯作者zhang, xw, cas, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. xwzhang@semi.ac.cn
学科主题半导体材料 ; 半导体材料
收录类别SCI
资助信息863 project of china [2009aa03z305]; national natural science foundation of china [60876031]
语种英语 ; 英语
资助机构863 project of China [2009AA03Z305]; National Natural Science Foundation of China [60876031]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注the effects of h-plasma treatment on the electroluminescence (el) of zno-based light-emitting diodes have been investigated systematically. after h-plasma treatment, the el intensity of the n-zno/aln/p-gan device is observed to be three times stronger than its as-grown counterpart under the same injection current, and the threshold voltage of the device is significantly reduced simultaneously. the increases in electron concentration and mobility of the zno layer resulting from the incorporation of hydrogen atoms into zno are considered to be responsible for the improved performance of the zno-based light-emitting diodes. (c) 2010 wiley-vch verlag gmbh & co. kgaa, weinheim
源URL[http://ir.semi.ac.cn/handle/172111/21041]  
专题半导体研究所_中科院半导体照明研发中心
通讯作者Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
推荐引用方式
GB/T 7714
Zhang SG,Zhang XW,Wang JX,et al. Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment, Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment[J]. physica status solidi-rapid research letters, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2011, 2011,5, 5(2):74-76, 74-76.
APA Zhang SG.,Zhang XW.,Wang JX.,You JB.,Yin ZG.,...&Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn.(2011).Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment.physica status solidi-rapid research letters,5(2),74-76.
MLA Zhang SG,et al."Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment".physica status solidi-rapid research letters 5.2(2011):74-76.

入库方式: OAI收割

来源:半导体研究所

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