Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment
文献类型:期刊论文
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作者 | Zhang SG; Zhang XW![]() ![]() |
刊名 | physica status solidi-rapid research letters
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出版日期 | 2011 ; 2011 |
卷号 | 5期号:2页码:74-76 |
关键词 | ZnO LED electroluminescence hydrogen-plasma treatment Zno Led Electroluminescence Hydrogen-plasma Treatment |
ISSN号 | 1862-6254 ; 1862-6254 |
通讯作者 | zhang, xw, cas, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. xwzhang@semi.ac.cn |
学科主题 | 半导体材料 ; 半导体材料 |
收录类别 | SCI |
资助信息 | 863 project of china [2009aa03z305]; national natural science foundation of china [60876031] |
语种 | 英语 ; 英语 |
资助机构 | 863 project of China [2009AA03Z305]; National Natural Science Foundation of China [60876031] |
公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
附注 | the effects of h-plasma treatment on the electroluminescence (el) of zno-based light-emitting diodes have been investigated systematically. after h-plasma treatment, the el intensity of the n-zno/aln/p-gan device is observed to be three times stronger than its as-grown counterpart under the same injection current, and the threshold voltage of the device is significantly reduced simultaneously. the increases in electron concentration and mobility of the zno layer resulting from the incorporation of hydrogen atoms into zno are considered to be responsible for the improved performance of the zno-based light-emitting diodes. (c) 2010 wiley-vch verlag gmbh & co. kgaa, weinheim |
源URL | [http://ir.semi.ac.cn/handle/172111/21041] ![]() |
专题 | 半导体研究所_中科院半导体照明研发中心 |
通讯作者 | Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn |
推荐引用方式 GB/T 7714 | Zhang SG,Zhang XW,Wang JX,et al. Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment, Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment[J]. physica status solidi-rapid research letters, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2011, 2011,5, 5(2):74-76, 74-76. |
APA | Zhang SG.,Zhang XW.,Wang JX.,You JB.,Yin ZG.,...&Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn.(2011).Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment.physica status solidi-rapid research letters,5(2),74-76. |
MLA | Zhang SG,et al."Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment".physica status solidi-rapid research letters 5.2(2011):74-76. |
入库方式: OAI收割
来源:半导体研究所
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