The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
文献类型：期刊论文
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| 作者 | Sun LL; Liu C ; Li JM; Wang JX; Yan FW; Zeng YP; Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
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| 刊名 | materials letters
 ; MATERIALS LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 65期号:4页码:667-669 |
| 关键词 | Diluted magnetic semiconductors (DMSs) Ion implantation Room-temperature ferromagnetic properties ROOM-TEMPERATURE Diluted Magnetic Semiconductors (Dmss) Ion implantatIon Room-temperature Ferromagnetic Properties Room-temperature |
| ISSN号 | 0167-577x ; 0167-577X |
| 通讯作者 | sun, ll, chinese acad sci, inst semicond, beijing 100083, peoples r china. lilisun@semi.ac.cn |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | natural science foundation of china [60876004] |
| 语种 | 英语 ; 英语 |
| 资助机构 | Natural Science Foundation of China [60876004] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | the impact of the annealing temperature on the structural and magnetic characteristics of gan:sm films fabricated by implantation method have been investigated in this paper. high-resolution x-ray diffraction (hrxrd) results indicate that the concentration of defects in samples decreases with increasing annealing temperature. superconducting quantum interference device (squid) results show that all samples exhibit room-temperature ferromagnetic properties and colossal magnetic effect. moreover, the average saturation magnetization per sm atom (ms/sm) of samples decreases sharply with increasing annealing temperature. the strong colossal magnetic effect (496.6 mu(b)/sm) of samples annealed at 700 degrees c may have close relation with its high concentration defects. (c) 2010 elsevier b.v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21043]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Sun LL,Liu C,Li JM,et al. The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films, The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films[J]. materials letters, MATERIALS LETTERS,2011, 2011,65, 65(4):667-669, 667-669. |
| APA | Sun LL.,Liu C.,Li JM.,Wang JX.,Yan FW.,...&Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn.(2011).The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films.materials letters,65(4),667-669. |
| MLA | Sun LL,et al."The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films".materials letters 65.4(2011):667-669. |
入库方式： OAI收割
来源：半导体研究所
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