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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED

文献类型：期刊论文

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作者Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH; Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
刊名acta physica sinica ; ACTA PHYSICA SINICA
出版日期2011 ; 2011
卷号60期号:1页码:article no.16108
关键词GaN-based LED Al composition electron blocking layer TEMPERATURE ALLOYS MOVPE Gan-based Led Al Composition Electron Blocking Layer Temperature Alloys Movpe
ISSN号1000-3290 ; 1000-3290
通讯作者wang, b, chinese acad sci, inst semicond, lighting r&d ctr, beijing 100083, peoples r china. wangbing@semi.ac.cn
学科主题半导体材料 ; 半导体材料
收录类别SCI
资助信息national high technology research and development program of china [2006aa03a114]
语种中文 ; 中文
资助机构National High Technology Research and Development Program of china [2006AA03A114]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注in the high-power ingan/gan-based led structures, p-algan layer plays a role as electron blocking layer. in this paper, gan/ingan-based led have been grown on sapphire by metal organic chemical vapor deposition (mocvd), and the p-type doping mechanism and structural optimization of algan layer were studied. the ways to change algan components have been discussed. we found that the growth temperature, growth pressure and flow tmal (mole ratio) have strong effect on the al components through different mechanisms. in the algan electron blocking layer, the al composition is between 10%-30% and the electron could be well limited to the quantum well region, maintaining a high quality crystal material. the p-type doping efficiency of algan layer is low, and there is a magnesium droop problem due to lack of hole injection. a new growth method is suggestece to solve the problem. grown under optimal conditions, the p-type algan inserted in a led structure greatly improves the output optical power of led device.
源URL[http://ir.semi.ac.cn/handle/172111/21045]  
专题半导体研究所_中科院半导体照明研发中心
通讯作者Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
推荐引用方式
GB/T 7714		 Wang B,Li ZC,Yao R,et al. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED, Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED[J]. acta physica sinica, ACTA PHYSICA SINICA,2011, 2011,60, 60(1):article no.16108, Article no.16108.
APA Wang B.,Li ZC.,Yao R.,Liang M.,Yan FW.,...&Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn.(2011).Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED.acta physica sinica,60(1),article no.16108.
MLA Wang B,et al."Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED".acta physica sinica 60.1(2011):article no.16108.

入库方式： OAI收割

来源：半导体研究所

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