Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
文献类型：期刊论文
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| 作者 | Wei TB; Yang JK; Hu Q; Duan RF ; Huo ZQ; Wang JX; Zeng YP; Wang GH; Li JM; Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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| 刊名 | journal of crystal growth
 ; JOURNAL OF CRYSTAL GROWTH
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| 出版日期 | 2011 ; 2011 |
| 卷号 | 314期号:1页码:141-145 |
| ISSN号 | 0022-0248 ; 0022-0248 |
| 关键词 | CL PL Stacking fault HVPE GaN Nonpolar CHEMICAL-VAPOR-DEPOSITION ACCEPTOR PAIR EMISSION PHASE EPITAXY GROWN GAN SEMICONDUCTORS SAPPHIRE FILMS NITRIDE Cl Pl Stacking Fault Hvpe Gan Nonpolar Chemical-vapor-deposition Acceptor Pair Emission Phase Epitaxy Grown Gan Semiconductors Sapphire Films Nitride |
| 通讯作者 | wei, tb, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. tbwei@semi.ac.cn |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 资助信息 | national natural sciences foundation of china [60806001]; national high technology program of china [2009aa03a198]; chinese academy of sciences [iscas2008t03] |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Sciences Foundation of China [60806001]; National High Technology Program of China [2009AA03A198]; Chinese Academy of Sciences [ISCAS2008T03] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | a comprehensive study of the morphology and luminescence characteristics of nonpolar m-plane gan etched in hot acids was presented. it was found that many four-sided pyramidal pits were distributed on the etched gan surface with the long side perpendicular to the [1 1 (2) over bar 0] direction, corresponding to the threading dislocations. when compared to the as-grown gan, dap emission intensity and its lo-phonon coupling phenomenon in the etched gan were greatly attenuated, whereas the intensity of bsf-related band almost kept constant due to its immunity to chemical etching. especially, a new psf-related emission at 332 ev emerged in cl spectra of etched gan. simultaneously, partial relaxation of compressive stress happened for the etched gan epilayer according to the red shift of nbe emission in photoluminescence (pl) and e-2(high) phonon peak in the raman spectra. contrary, the dap peak in etched gan was blueshifted, likely due to the reduced impurity level fluctuation by etching. in addition, the different behaviors were discussed for nbe and defect-related transitions in the etched gan, characterized by excitation power- and temperature-dependent pl (c) 2010 elsevier b.v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21047]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Wei TB,Yang JK,Hu Q,et al. Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching, Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching[J]. journal of crystal growth, JOURNAL OF CRYSTAL GROWTH,2011, 2011,314, 314(1):141-145, 141-145. |
| APA | Wei TB.,Yang JK.,Hu Q.,Duan RF.,Huo ZQ.,...&Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn.(2011).Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching.journal of crystal growth,314(1),141-145. |
| MLA | Wei TB,et al."Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching".journal of crystal growth 314.1(2011):141-145. |
入库方式： OAI收割
来源：半导体研究所
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