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Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
文献类型：期刊论文
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| 作者 | Wei TB ; Kong QF; Wang JX; Li J; Zeng YP; Wang GH; Li JM; Liao YX; Yi FT; Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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| 刊名 | optics express
 ; OPTICS EXPRESS
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| 出版日期 | 2011 ; 2011 |
| 卷号 | 19期号:2页码:1065-1071 |
| 关键词 | OUTPUT ENHANCEMENT Output Enhancement |
| ISSN号 | 1094-4087 ; 1094-4087 |
| 通讯作者 | wei, tb, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. tbwei@semi.ac.cn |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national natural sciences foundation of china [60806001, 50972144]; national high technology program of china [2009aa03a198]; chinese academy of sciences [iscas2008t03] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Sciences Foundation of China [60806001, 50972144]; National High Technology Program of China [2009AA03A198]; Chinese Academy of Sciences [ISCAS2008T03] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | ingan-based light emitting diodes (leds) with a top nano-roughened p-gan surface are fabricated using self-assembled cscl nano-islands as etch masks. following formation of hemispherical gan nano-island arrays, electroluminescence (el) spectra of roughened leds display an obvious redshift due to partial compression release in quantum wells through inductively coupled plasma (icp) etching. at a 350-ma current, the enhancement of light output power of leds subjected to icp treatment with durations of 50, 150 and 250 sec compared with conventional led have been determined to be 9.2, 70.6, and 42.3%, respectively. additionally, the extraction enhancement factor can be further improved by increasing the size of cscl nano-island. the economic and rapid method puts forward great potential for high performance lighting devices. (c) 2011 optical society of america |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21049]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Wei TB,Kong QF,Wang JX,et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands, Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands[J]. optics express, OPTICS EXPRESS,2011, 2011,19, 19(2):1065-1071, 1065-1071. |
| APA | Wei TB.,Kong QF.,Wang JX.,Li J.,Zeng YP.,...&Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn.(2011).Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.optics express,19(2),1065-1071. |
| MLA | Wei TB,et al."Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands".optics express 19.2(2011):1065-1071. |
入库方式： OAI收割
来源：半导体研究所
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