Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
文献类型：期刊论文
| 作者 | Pan X
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2011 |
| 卷号 | 318期号:1页码:464-467 |
| 关键词 | Sandwich structure Stress Aluminum nitride Gallium nitride Silicon PHONON DEFORMATION POTENTIALS WURTZITE ALN SILICON STRESS TRANSISTORS EPITAXY LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | pan, x, chinese acad sci, inst semicond, ctr mat sci, beijing 100864, peoples r china. xpan@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | a single high temperature aln (ht-aln) buffer has been used to relieve the stress in the growth of gan epilayers on si (1 1 1) substrates, but the growth of crack-free gan on si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (cte) between gan and si. in this paper, we report the growth of 1.2 mu m thick crack-free gan epilayers on 2 in. si (1 1 1) substrates using the aln sandwich structure as a buffer. the surface morphologies of the samples were observed using a microscope and afm. further analysis shows that the crack-free sample is closely correlated to the introduction of the aln sandwich structure as the buffer. to better understand the relationship between the cracks and the stress, raman scattering has been used to study the stress in the samples. the results indicate that the sandwich structure with top aln and bottom aln can more effectively accommodate the strain energy caused by cte mismatch stress. (c) 2010 elsevier b.v. all rights reserved. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20811]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Pan X. Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer[J]. journal of crystal growth,2011,318(1):464-467. |
| APA | Pan X.(2011).Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer.journal of crystal growth,318(1),464-467. |
| MLA | Pan X."Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer".journal of crystal growth 318.1(2011):464-467. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。