InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
文献类型：期刊论文
| 作者 | Hou QF ; Yin HB
|
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:2页码:article no.28402 |
| 关键词 | InGaN solar cell multiple quantum wells IN1-XGAXN ALLOYS BAND-GAP INN |
| ISSN号 | 1674-1056 |
| 通讯作者 | zhang, xb, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. soffeezxb@163.com |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | chinese academy of sciences [yyyj-0701-02, iscas2008t01, iscas2009l01, iscas2009l02]; national natural science foundation of china [60890193, 60906006]; state key development program for basic research of china [2006cb604905, 2010cb327503] |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | in this paper, ingan/gan multiple quantum well solar cells (mqwscs) with an in content of 0.15 are fabricated and studied. the short-circuit density, fill factor and open-circuit voltage (v-oc) of the device are 0.7 ma/cm(2), 0.40 and 2.22 v, respectively. the results exhibit a significant enhancement of v-oc compared with those of ingan-based hetero and homojunction cells. this enhancement indicates that the ingan/gan mqwsc offers an effective way for increasing v-oc of an in-rich inxga1-xn solar cell. the device exhibits an external quantum efficiency (eqe) of 36% (7%) at 388 nm (430 nm). the photovoltaic performance of the device can be improved by optimizing the structure of the ingan/gan multiple quantum well. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20819]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Hou QF,Yin HB. InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage[J]. chinese physics b,2011,20(2):article no.28402. |
| APA | Hou QF,&Yin HB.(2011).InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage.chinese physics b,20(2),article no.28402. |
| MLA | Hou QF,et al."InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage".chinese physics b 20.2(2011):article no.28402. |
入库方式： OAI收割
来源：半导体研究所
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