Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
文献类型：期刊论文
| 作者 | Deng QW
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:10页码:article no.102104 |
| ISSN号 | 0003-6951 |
| 关键词 | QUANTUM-WELL-STRUCTURE ALGAN/GAN HETEROSTRUCTURE YELLOW LUMINESCENCE DEEP LEVELS TRAP PERFORMANCE FREQUENCY EPILAYERS ORIGIN DIODES |
| 通讯作者 | hou, qf, chinese acad sci, ctr mat sci, inst semicond, pob 912, beijing 100083, peoples r china. qfhou@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences [yyyj-0701-02]; national nature sciences foundation of china [60890193, 60906006]; state key development program for basic research of china [2006cb604905, 2010cb327503]; chinese academy of sciences [iscas2008t01, iscas2009l01, iscas2009l02] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | the influence of electric field on persistent photoconductivity in unintentionally doped n-gan is investigated. it was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. after a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. it is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the coulomb-repulsive characteristic of defects related to persistent photoconductivity. (c) 2011 american institute of physics. [doi:10.1063/1.3562008] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20821]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Deng QW. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. applied physics letters,2011,98(10):article no.102104. |
| APA | Deng QW.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.applied physics letters,98(10),article no.102104. |
| MLA | Deng QW."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".applied physics letters 98.10(2011):article no.102104. |
入库方式： OAI收割
来源：半导体研究所
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