Preparation and Optical Performance of Freestanding GaN Thick Films
文献类型：期刊论文
| 作者 | Wei TB ; Yang JK; Duan RF
|
| 刊名 | rare metal materials and engineering
 |
| 出版日期 | 2010 |
| 卷号 | 39期号:12页码:2169-2172 |
| 关键词 | GaN HVPE freestanding thick films stress release photoluminescence VAPOR-PHASE EPITAXY GROWTH PRESSURE HVPE |
| ISSN号 | 1002-185x |
| 通讯作者 | hu, qa, chinese acad sci, inst semicond, beijing 100083, peoples r china. huqiang@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2011-07-05 ; 2011-07-15 |
| 附注 | high-quality freestanding gan thick films were deposited by hydride vapor phase epitaxy (hvpe) on sapphire wafer with a thin ti film on the top. the fwhm of (0002) peaks in the x-ray rocking curve profile is 260 arcsec. the fwhm of band edge emission peaks at 5 k and room temperature are 3 mev and 20 mev, respectively. the yellow spectral region is not observed at room temperature. the surface morphology of gan films was characterized by scanning electron microscope; results show that hexagonal pits from dislocation extension exist on the surface of freestanding gan thick films after corrosion and their dislocation density is estimated as 2.1 x 10(7) cm(-2). all these results prove that the ti metal interlayer improves the crystalline quality of gan epitaxial layer. the results of raman and pl show that the surface stress of the gan films is released completely. finally, the temperature-dependent pl was investigated; the result also proves that the stress-free freestanding gan thick films have high crystalline quality and optical quality. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20825]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Wei TB,Yang JK,Duan RF. Preparation and Optical Performance of Freestanding GaN Thick Films[J]. rare metal materials and engineering,2010,39(12):2169-2172. |
| APA | Wei TB,Yang JK,&Duan RF.(2010).Preparation and Optical Performance of Freestanding GaN Thick Films.rare metal materials and engineering,39(12),2169-2172. |
| MLA | Wei TB,et al."Preparation and Optical Performance of Freestanding GaN Thick Films".rare metal materials and engineering 39.12(2010):2169-2172. |
入库方式： OAI收割
来源：半导体研究所
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