Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
文献类型：期刊论文
| 作者 | Zhang ML
|
| 刊名 | applied physics a-materials science & processing
 |
| 出版日期 | 2011 |
| 卷号 | 104期号:1页码:429-432 |
| 关键词 | GaN Ferromagnetic Implantation Annealing |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-07-07 ; 2011-07-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21394]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Zhang ML. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions[J]. applied physics a-materials science & processing,2011,104(1):429-432. |
| APA | Zhang ML.(2011).Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions.applied physics a-materials science & processing,104(1),429-432. |
| MLA | Zhang ML."Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions".applied physics a-materials science & processing 104.1(2011):429-432. |
入库方式： OAI收割
来源：半导体研究所
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