中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

文献类型:期刊论文

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作者Xu PF; Lu J; Chen L; Yan SA; Meng HJ; Pan GQ; Zhao JH; Zhao, JH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn
刊名nanoscale research letters ; NANOSCALE RESEARCH LETTERS
出版日期2011 ; 2011
卷号6页码:article no.125
关键词MAGNETIC-PROPERTIES GAAS(001) FILMS ORDER NANOCLUSTERS EPITAXY Magnetic-properties Gaas(001) Films Order Nanoclusters Epitaxy
ISSN号1931-7573 ; 1931-7573
通讯作者zhao, jh, chinese acad sci, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. jhzhao@red.semi.ac.cn
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息national natural science foundation of china [60836002]; special funds for the major state basic research of china [2007cb924903]; chinese academy of sciences [kjcx2.yw.w09-1]
语种英语 ; 英语
资助机构National Natural Science Foundation of China [60836002]; special funds for the Major State Basic Research of China [2007CB924903]; Chinese Academy of Sciences [KJCX2.YW.W09-1]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注mnas films are grown on gaas surfaces by molecular beam epitaxy. specular and grazing incidence x-ray diffractions are used to study the influence of different strain states of mnas/gaas (110) and mnas/gaas (001) on the first-order magnetostructural phase transition. it comes out that the first-order magnetostructural phase transition temperature t-t, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented gaas substrates. our results show an elevated t-t of 350 k for mnas films grown on gaas (110) surface, which is attributed to the effect of strain constraint from different directions.
源URL[http://ir.semi.ac.cn/handle/172111/20839]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Zhao, JH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn
推荐引用方式
GB/T 7714
Xu PF,Lu J,Chen L,et al. Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110), Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)[J]. nanoscale research letters, NANOSCALE RESEARCH LETTERS,2011, 2011,6, 6:article no.125, Article no.125.
APA Xu PF.,Lu J.,Chen L.,Yan SA.,Meng HJ.,...&Zhao, JH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn.(2011).Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110).nanoscale research letters,6,article no.125.
MLA Xu PF,et al."Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)".nanoscale research letters 6(2011):article no.125.

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来源:半导体研究所

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