Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
文献类型:期刊论文
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作者 | Xu PF; Lu J; Chen L![]() |
刊名 | nanoscale research letters
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出版日期 | 2011 ; 2011 |
卷号 | 6页码:article no.125 |
关键词 | MAGNETIC-PROPERTIES GAAS(001) FILMS ORDER NANOCLUSTERS EPITAXY Magnetic-properties Gaas(001) Films Order Nanoclusters Epitaxy |
ISSN号 | 1931-7573 ; 1931-7573 |
通讯作者 | zhao, jh, chinese acad sci, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. jhzhao@red.semi.ac.cn |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | SCI |
资助信息 | national natural science foundation of china [60836002]; special funds for the major state basic research of china [2007cb924903]; chinese academy of sciences [kjcx2.yw.w09-1] |
语种 | 英语 ; 英语 |
资助机构 | National Natural Science Foundation of China [60836002]; special funds for the Major State Basic Research of China [2007CB924903]; Chinese Academy of Sciences [KJCX2.YW.W09-1] |
公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
附注 | mnas films are grown on gaas surfaces by molecular beam epitaxy. specular and grazing incidence x-ray diffractions are used to study the influence of different strain states of mnas/gaas (110) and mnas/gaas (001) on the first-order magnetostructural phase transition. it comes out that the first-order magnetostructural phase transition temperature t-t, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented gaas substrates. our results show an elevated t-t of 350 k for mnas films grown on gaas (110) surface, which is attributed to the effect of strain constraint from different directions. |
源URL | [http://ir.semi.ac.cn/handle/172111/20839] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
通讯作者 | Zhao, JH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn |
推荐引用方式 GB/T 7714 | Xu PF,Lu J,Chen L,et al. Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110), Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)[J]. nanoscale research letters, NANOSCALE RESEARCH LETTERS,2011, 2011,6, 6:article no.125, Article no.125. |
APA | Xu PF.,Lu J.,Chen L.,Yan SA.,Meng HJ.,...&Zhao, JH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. jhzhao@red.semi.ac.cn.(2011).Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110).nanoscale research letters,6,article no.125. |
MLA | Xu PF,et al."Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)".nanoscale research letters 6(2011):article no.125. |
入库方式: OAI收割
来源:半导体研究所
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