Hole mediated magnetism in Mn-doped GaN nanowires
文献类型：期刊论文
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| 作者 | Zhang XW; Li JB ; Chang K; Li SS; Xia JB; Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn
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| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2011 ; 2011 |
| 卷号 | 109期号:7页码:article no.74313 |
| ISSN号 | 0021-8979 ; 0021-8979 |
| 关键词 | MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE QUANTUM WIRES SEMICONDUCTORS FERROMAGNETISM FIELD GAMNN Molecular-beam Epitaxy Room-temperature Quantum Wires Semiconductors Ferromagnetism Field Gamnn |
| 通讯作者 | zhang, xw, chinese acad sci, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. xiajb@red.semi.ac.cn |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 资助信息 | national natural science foundation [60521001, 60525405]; national basic research program of china [2011cb922200] |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation [60521001, 60525405]; National Basic Research Program of China [2011CB922200] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | the hole-mediated magnetism in mn-doped gan nanowires is investigated using the k (.) p method and the mean-field model. the curie temperature (t-c) as a function of the hole density p can be explained based on the calculated band structure of the nanowires. for low mn concentration, t-c vs. p shows many peaks stem from the peaks of the one-dimensional density of states. when the mn concentration is increased, t-c is enhanced, and the peaks of t-c versus p are fully merged by the thermal distribution of the holes in the valence band. it is found that the curie temperature in mn-doped gan wire can be higher than room temperature, in agreement with experiment [song et al., j. phys.: condens. matter 17, 5073 (2005)]. the ferromagnetism in mn-doped gan wire is slightly anisotropic due to the small spin-orbit coupling. (c) 2011 american institute of physics. [doi: 10.1063/1.3555092] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20861]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Zhang XW,Li JB,Chang K,et al. Hole mediated magnetism in Mn-doped GaN nanowires, Hole mediated magnetism in Mn-doped GaN nanowires[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2011, 2011,109, 109(7):article no.74313, Article no.74313. |
| APA | Zhang XW,Li JB,Chang K,Li SS,Xia JB,&Zhang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xiajb@red.semi.ac.cn.(2011).Hole mediated magnetism in Mn-doped GaN nanowires.journal of applied physics,109(7),article no.74313. |
| MLA | Zhang XW,et al."Hole mediated magnetism in Mn-doped GaN nanowires".journal of applied physics 109.7(2011):article no.74313. |
入库方式： OAI收割
来源：半导体研究所
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