Spin and momentum filtering of electrons on the surface of a topological insulator
文献类型:期刊论文
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作者 | Wu ZH![]() |
刊名 | applied physics letters
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出版日期 | 2011 ; 2011 |
卷号 | 98期号:16页码:article no.162101 |
关键词 | SINGLE DIRAC CONE GRAPHENE BI2TE3 PHASE Single Dirac Cone Graphene Bi2te3 Phase |
ISSN号 | 0003-6951 ; 0003-6951 |
通讯作者 | wu, zh, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. zhwu@semi.ac.cn |
学科主题 | 半导体物理 ; 半导体物理 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
附注 | we investigate theoretically the transport properties of dirac fermions on the surface of a three-dimensional topological insulator. dirac electrons can be totally reflected in front of a magnetic/electric p-n junction. for a p-n-p structure, multiple total internal reflections at the interfaces result in the bound states in the channel, which behaves like an electronic waveguide. this p-n-p like structure exhibits spin and momentum filtering features and could be used as a spin and/or charge diode. (c) 2011 american institute of physics. [doi: 10.1063/1.3581887] |
源URL | [http://ir.semi.ac.cn/handle/172111/20863] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
通讯作者 | Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. zhwu@semi.ac.cn |
推荐引用方式 GB/T 7714 | Wu ZH,Peeters FM,Chang K,et al. Spin and momentum filtering of electrons on the surface of a topological insulator, Spin and momentum filtering of electrons on the surface of a topological insulator[J]. applied physics letters, APPLIED PHYSICS LETTERS,2011, 2011,98, 98(16):article no.162101, Article no.162101. |
APA | Wu ZH,Peeters FM,Chang K,&Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. zhwu@semi.ac.cn.(2011).Spin and momentum filtering of electrons on the surface of a topological insulator.applied physics letters,98(16),article no.162101. |
MLA | Wu ZH,et al."Spin and momentum filtering of electrons on the surface of a topological insulator".applied physics letters 98.16(2011):article no.162101. |
入库方式: OAI收割
来源:半导体研究所
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