Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
文献类型：期刊论文
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| 作者 | Shang XJ; He JF ; Wang HL; Li MF; Zhu Y; Niu ZC; Fu Y; Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn; fyg@theochem.kth.se
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| 刊名 | applied physics a-materials science & processing
 ; APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
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| 出版日期 | 2011 ; 2011 |
| 卷号 | 103期号:2页码:335-341 |
| 关键词 | INTERMEDIATE-BAND TRANSITIONS Intermediate-band Transitions |
| ISSN号 | 0947-8396 ; 0947-8396 |
| 通讯作者 | shang, xj, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. xjshang@semi.ac.cn ; fyg@theochem.kth.se |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | chinese natural science fund [60625405]; 973 project in china [2010cb327601]; richertska foundation in sweden ; swedish national infrastructure for computing [snic 001-09-52] |
| 语种 | 英语 ; 英语 |
| 资助机构 | Chinese Natural Science Fund [60625405]; 973 project in China [2010CB327601]; Richertska Foundation in Sweden ; Swedish National Infrastructure for Computing [SNIC 001-09-52] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | in this paper, three p-i-n gaas solar cells were grown and characterized, one with inas quantum dot (qd) layers embedded in the depletion region (sample a), one with qd layers embedded in the n (-) base region (b), and the third without qds (control sample c). qd-embedded solar cells (samples a and b) show broad photoluminescence spectra due to qd multi-level emissions but have lower open-circuit voltages v (oc) and lower photovoltaic (pv) efficiencies than sample c. on the other hand, the short-circuit current density j (sc) in sample a is increased while it is decreased in sample b. theoretical analysis shows that in sample b where the built-in electric field in qds is zero, electrons tend to occupy qds and strong potential variations exist around qds which deteriorate the electron mobility in the n (-) base region so that j (sc) in sample b is decreased. hole trapping and electron-hole recombination in qds are also enhanced in sample b, resulting in a reduced v (oc) and thus a worse pv effect. in sample a, a strong built-in field exists in qd layers, which facilitates photo-carrier extraction from qds and thus j (sc) is increased. however, qds in the depletion region in sample a act also as recombination-generation centers so that the dark saturated current density is drastically increased, which reduces v (oc) and the total pv effect. in conclusion, a nonzero built-in electric field around qds is vital for using qds to increase the pv effect in conventional p-i-n gaas solar cells. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20877]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Shang, XJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. xjshang@semi.ac.cn; fyg@theochem.kth.se |
| 推荐引用方式 GB/T 7714 | Shang XJ,He JF,Wang HL,et al. Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell, Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell[J]. applied physics a-materials science & processing, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011, 2011,103, 103(2):335-341, 335-341. |
| APA | Shang XJ.,He JF.,Wang HL.,Li MF.,Zhu Y.,...&fyg@theochem.kth.se.(2011).Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell.applied physics a-materials science & processing,103(2),335-341. |
| MLA | Shang XJ,et al."Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell".applied physics a-materials science & processing 103.2(2011):335-341. |
入库方式： OAI收割
来源：半导体研究所
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