Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
文献类型：期刊论文
| ; | |
| 作者 | Han LF; Zhu YG; Zhang XH; Tan PH; Ni HQ; Niu ZC; Zhang, XH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xinhuiz@semi.ac.cn |
| 刊名 | nanoscale research letters
 ; NANOSCALE RESEARCH LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 6页码:article no.84 |
| 关键词 | ROOM-TEMPERATURE Room-temperature |
| ISSN号 | 1931-7573 ; 1931-7573 |
| 通讯作者 | zhang, xh, chinese acad sci, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. xinhuiz@semi.ac.cn |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china [2011cb922200, 2007cb924904]; national natural science foundation of china [10974195, 10734060] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Basic Research Program of China [2011CB922200, 2007CB924904]; National Natural Science Foundation of China [10974195, 10734060] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | temperature and carrier density-dependent spin dynamics for gaas/algaas quantum wells (qws) with different structural symmetries have been studied by using time-resolved kerr rotation technique. the spin relaxation time is measured to be much longer for the symmetrically designed gaas qw comparing with the asymmetrical one, indicating the strong influence of rashba spin-orbit coupling on spin relaxation. d'yakonov-perel' mechanism has been revealed to be the dominant contribution for spin relaxation in gaas/algaas qws. the spin relaxation time exhibits non-monotonic-dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron coulomb scattering. our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin bloch equation approach. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20881]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhang, XH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xinhuiz@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Han LF,Zhu YG,Zhang XH,et al. Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well, Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well[J]. nanoscale research letters, NANOSCALE RESEARCH LETTERS,2011, 2011,6, 6:article no.84, Article no.84. |
| APA | Han LF.,Zhu YG.,Zhang XH.,Tan PH.,Ni HQ.,...&Zhang, XH, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xinhuiz@semi.ac.cn.(2011).Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well.nanoscale research letters,6,article no.84. |
| MLA | Han LF,et al."Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well".nanoscale research letters 6(2011):article no.84. |
入库方式： OAI收割
来源：半导体研究所
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