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Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage

文献类型：期刊论文

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作者Li WL; Jia R; Chen C; Li HF; Liu XY; Yue HH; Ding WC; Ye TC; Kasai S; Hashizume T
刊名journal of vacuum science & technology b ; JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
出版日期2011 ; 2011
卷号29期号:2页码:article no.21018
关键词SI NANOCRYSTALS MEMORY TECHNOLOGY DEPOSITION VOLTAGE LAYER Si Nanocrystals Memory Technology Deposition Voltage Layer
ISSN号1071-1023 ; 1071-1023
通讯作者jia, r, chinese acad sci, microwave devices & integrated circuits dept, inst microelect, beijing 100029, peoples r china. jiarui@ime.ac.cn
学科主题微电子学 ; 微电子学
收录类别SCI
资助信息973 projects [2006cb604904, 2009cb939703]; chinese nsf [60706023, 60676001, 60977050]; chinese academy of sciences (cas) ; presto, japan science and technology agency, japan
语种英语 ; 英语
资助机构973 Projects [2006CB604904, 2009CB939703]; Chinese NSF [60706023, 60676001, 60977050]; Chinese Academy of Sciences (CAS) ; PRESTO, Japan Science and Technology Agency, Japan
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注annealing thin films of silicon containing hfo2 films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high-kappa dielectric hfo2. such films can be used to fabricate nonvolatile memory devices. by changing the si content in the precursor hfsixo2 (x=1, 2, 3, or 4) film, the size and density of silicon nanocrystal could be controlled and high-density of silicon nanocrystals could be obtained. transmission electron microscopy observations showed that the maximum density of silicon nanocrystals was as high as 1.3 x 10(13) cm(-2) for hfsi4o2 and the average nanocrystal diameter was 4.3 nm. the metal-oxide semiconductor capacitor memory structure with embedded silicon nanocrystals in hfsi4o2 exhibited the largest memory window, 3.94 v under +/- 5 v sweep voltage. (c) 2011 american vacuum society. [doi: 10.1116/1.3554736]
源URL[http://ir.semi.ac.cn/handle/172111/20885]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Jia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. jiarui@ime.ac.cn
推荐引用方式
GB/T 7714		 Li WL,Jia R,Chen C,et al. Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage, Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage[J]. journal of vacuum science & technology b, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2011, 2011,29, 29(2):article no.21018, Article no.21018.
APA Li WL.,Jia R.,Chen C.,Li HF.,Liu XY.,...&Jia, R, Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China. jiarui@ime.ac.cn.(2011).Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage.journal of vacuum science & technology b,29(2),article no.21018.
MLA Li WL,et al."Formation of silicon nanocrystals embedded in high-kappa dielectric HfO2 and their application for charge storage".journal of vacuum science & technology b 29.2(2011):article no.21018.

入库方式： OAI收割

来源：半导体研究所

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