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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation

文献类型：期刊论文

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作者Jiang XW; Li SS; Xia JB; Wang LW; Jiang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xwjiang@semi.ac.cn
刊名journal of applied physics ; JOURNAL OF APPLIED PHYSICS
出版日期2011 ; 2011
卷号109期号:5页码:article no.54503
ISSN号0021-8979 ; 0021-8979
关键词FIELD-EFFECT TRANSISTORS SEMICONDUCTOR-DEVICES SILICON DEVICES MONTE-CARLO MOSFETS NANOTRANSISTORS APPROXIMATION EQUATIONS DESIGN MODELS Field-effect Transistors Semiconductor-devices Silicon Devices Monte-carlo Mosfets Nanotransistors Approximation Equations Design Models
通讯作者jiang, xw, chinese acad sci, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. xwjiang@semi.ac.cn
学科主题半导体物理 ; 半导体物理
资助信息national basic research program of china (973 program) [g2009cb929300]; national natural science foundation of china [60821061, 60776061]; u.s. department of energy bes, office of science [de-ac02-05ch11231]
收录类别SCI
语种英语 ; 英语
资助机构National Basic Research Program of China (973 Program) [G2009CB929300]; National Natural Science Foundation of China [60821061, 60776061]; U.S. Department of Energy BES, Office of Science [DE-AC02-05CH11231]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注we present a new empirical pseudopotential (epm) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using periodic boundary conditions. to treat the nonequilibrium condition, instead of directly calculating the scattering states from the source and drain, we calculate the stationary states by the linear combination of bulk band method and then decompose the stationary wave function into source and drain injecting scattering states according to an approximated top of the barrier splitting (tbs) scheme based on physical insight of ballistic and tunneling transports. the decomposed electronic scattering states are then occupied according to the source/drain fermi-levels to yield the occupied electron density which is then used to solve the potential, forming a self-consistent loop. the tbs is tested in a one-dimensional effective mass model by comparing with the direct scattering state calculation results. it is also tested in a three-dimensional 22 nm double gate ultra-thin-body field-effect transistor study, by comparing the tbs-epm result with the nonequilibrium green's function tight-binding result. we expected the tbs scheme will work whenever the potential in the barrier region is smoother than the wave function oscillations and it does not have local minimum, thus there is no multiple scattering as in a resonant tunneling diode, and when a three-dimensional problem can be represented as a quasi-one-dimensional problem, e. g., in a variable separation approximation. using our approach, a million atom nonequilibrium nanostructure device can be simulated with epm on a single processor computer. (c) 2011 american institute of physics. [doi:10.1063/1.3556430]
源URL[http://ir.semi.ac.cn/handle/172111/20891]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Jiang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xwjiang@semi.ac.cn
推荐引用方式
GB/T 7714		 Jiang XW,Li SS,Xia JB,et al. Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation, Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2011, 2011,109, 109(5):article no.54503, Article no.54503.
APA Jiang XW,Li SS,Xia JB,Wang LW,&Jiang, XW, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xwjiang@semi.ac.cn.(2011).Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation.journal of applied physics,109(5),article no.54503.
MLA Jiang XW,et al."Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation".journal of applied physics 109.5(2011):article no.54503.

入库方式： OAI收割

来源：半导体研究所

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