Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
文献类型：期刊论文
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| 作者 | He JF; Niu ZC; Chang XY; Ni HQ; Zhu Y; Li MF ; Shang XJ; Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
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| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 20期号:1页码:article no.18102 |
| 关键词 | molecular beam epitaxy anti-phase domain GaAs/Ge interface CHEMICAL VAPOR-DEPOSITION JUNCTION SOLAR-CELLS DOMAIN-FREE GROWTH TEMPERATURE QUALITY FUTURE Molecular Beam Epitaxy Anti-phase Domain Gaas/ge Interface Chemical Vapor-deposition Junction Solar-cells Domain-free Growth Temperature Quality Future |
| ISSN号 | 1674-1056 ; 1674-1056 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. zcniu@semi.ac.cn |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china [60625405]; national basic research program of china [2007cb936304, 2010cb327601] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation of China [60625405]; National Basic Research Program of China [2007CB936304, 2010CB327601] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | molecular beam epitaxy growth of gaas on an offcut ge(100) substrate has been systemically investigated. a high quality gaas/ge interface and gaas film on ge have been achieved. high temperature annealing before gaas deposition is found to be indispensable to avoid anti-phase domains. the quality of the gaas film is found to strongly depend on the gaas/ge interface and the beginning of gaas deposition. the reason why both high temperature annealing and gaas growth temperature can affect epitaxial gaas film quality is discussed. high quality in0.17ga0.83as/gaas strained quantum wells have also been achieved on a ge substrate. samples show at surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a gaas substrate. these results indicate a large application potential for iii-v compound semiconductor optoelectronic devices on ge substrates. |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20905]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | He JF,Niu ZC,Chang XY,et al. Molecular beam epitaxy growth of GaAs on an offcut Ge substrate, Molecular beam epitaxy growth of GaAs on an offcut Ge substrate[J]. chinese physics b, CHINESE PHYSICS B,2011, 2011,20, 20(1):article no.18102, Article no.18102. |
| APA | He JF.,Niu ZC.,Chang XY.,Ni HQ.,Zhu Y.,...&Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn.(2011).Molecular beam epitaxy growth of GaAs on an offcut Ge substrate.chinese physics b,20(1),article no.18102. |
| MLA | He JF,et al."Molecular beam epitaxy growth of GaAs on an offcut Ge substrate".chinese physics b 20.1(2011):article no.18102. |
入库方式： OAI收割
来源：半导体研究所
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