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Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn

文献类型：期刊论文

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作者Yang GD; Zhu F; Dong S; Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com
刊名journal of crystal growth ; JOURNAL OF CRYSTAL GROWTH
出版日期2011 ; 2011
卷号316期号:1页码:145-148
ISSN号0022-0248 ; 0022-0248
关键词Diffusion Physical vapor deposition processes Magnetic materials Semiconducting III-V materials GASB/MN DIGITAL ALLOYS ROOM-TEMPERATURE FERROMAGNETISM RAMAN-SCATTERING MAGNETOTRANSPORT PROPERTIES EPITAXIAL LAYERS THIN-FILMS SEMICONDUCTORS STRAIN MAGNETOELECTRONICS SPINTRONICS Diffusion Physical Vapor Deposition Processes Magnetic Materials Semiconducting Iii-v Materials Gasb/mn Digital Alloys Room-temperature Ferromagnetism Raman-scattering Magnetotransport Properties Epitaxial Layers Thin-films Semiconductors Strain Magnetoelectronics Spintronics
通讯作者yang, gd, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. guandongyang@gmail.com
学科主题半导体物理 ; 半导体物理
资助信息postdoctoral foundation of china
收录类别SCI
语种英语 ; 英语
资助机构Postdoctoral Foundation of China
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注ferromagnetic gamnsb has been fabricated by a feasible and low expense method through thermal diffusion of vacuum evaporated mn on the surface of gasb. with the introduction of mn, the concentration of hole carriers increases significantly. the existence of mn has not lead to obvious appearance of secondary phase, like mnsb, confirmed by x-ray diffraction. a shifted raman peak clearly indicates the doping effect of mn. we have also observed an m-h hysteresis loop at 10 k by superconducting quantum interference device. the curie temperature of gamnsb in our sample is about 30 k. crown copyright (c) 2010 published by elsevier b.v. all rights reserved.
源URL[http://ir.semi.ac.cn/handle/172111/20911]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com
推荐引用方式
GB/T 7714		 Yang GD,Zhu F,Dong S,et al. Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn, Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn[J]. journal of crystal growth, JOURNAL OF CRYSTAL GROWTH,2011, 2011,316, 316(1):145-148, 145-148.
APA Yang GD,Zhu F,Dong S,&Yang, GD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. guandongyang@gmail.com.(2011).Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn.journal of crystal growth,316(1),145-148.
MLA Yang GD,et al."Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn".journal of crystal growth 316.1(2011):145-148.

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来源：半导体研究所

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