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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations

文献类型：期刊论文

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作者Liu CR; Li JB; Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn; jbli@semi.ac.cn
刊名physics letters a ; PHYSICS LETTERS A
出版日期2011 ; 2011
卷号375期号:7页码:1152-1155
ISSN号0375-9601 ; 0375-9601
关键词First principle calculation Indium nitride Band gap Defect INITIO MOLECULAR-DYNAMICS AUGMENTED-WAVE METHOD INDIUM NITRIDE GAP PSEUDOPOTENTIALS SEMICONDUCTORS IMPURITIES ABSORPTION DEFECTS ALLOYS First Principle Calculation Indium Nitride Band Gap Defect Initio Molecular-dynamics Augmented-wave Method Indium Nitride Gap Pseudopotentials Semiconductors Impurities Absorption Defects Alloys
通讯作者liu, cr, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. supermanliu5@semi.ac.cn ; jbli@semi.ac.cn
学科主题半导体物理 ; 半导体物理
资助信息chinese academy of sciences ; national science fund for distinguished young scholar [60925016]; national high technology research and development program of china [2009aa034101]
收录类别SCI
语种英语 ; 英语
资助机构Chinese Academy of Sciences ; National Science Fund for Distinguished Young Scholar [60925016]; National High Technology Research and Development program of China [2009AA034101]
公开日期2011-07-05 ; 2011-07-15 ; 2011-07-05
附注indium nitride (inn) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (gan) buffer through metal-organic chemical vapor deposition (mocvd) method. based on first-principle calculations, we confirm that the widening of inn optical bandgap reported before is caused by high density of free electrons. to find the contributor of the free electrons, the characteristic energetic levels of o-n, v-n and si-in are investigated. we find that they are all high enough to uplift the optical bandgap from about 0.78 ev to 1.9 ev, which almost can't be enlarged further when it reaches 2.09 ev. (c) 2011 elsevier b.v. all rights reserved.
源URL[http://ir.semi.ac.cn/handle/172111/20919]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn; jbli@semi.ac.cn
推荐引用方式
GB/T 7714		 Liu CR,Li JB,Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn,et al. The explanation of InN bandgap discrepancy based on experiments and first-principle calculations, The explanation of InN bandgap discrepancy based on experiments and first-principle calculations[J]. physics letters a, PHYSICS LETTERS A,2011, 2011,375, 375(7):1152-1155, 1152-1155.
APA Liu CR,Li JB,Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn,&jbli@semi.ac.cn.(2011).The explanation of InN bandgap discrepancy based on experiments and first-principle calculations.physics letters a,375(7),1152-1155.
MLA Liu CR,et al."The explanation of InN bandgap discrepancy based on experiments and first-principle calculations".physics letters a 375.7(2011):1152-1155.

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来源：半导体研究所

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