Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
文献类型：期刊论文
| ; | |
| 作者 | Wang KY; Edmonds KW; Irvine AC; Tatara G; De Ranieri E; Wunderlich J; Olejnik K; Rushforth AW; Campion RP; Williams DA |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 97期号:26页码:article no.262102 |
| 关键词 | MN)AS (GA Mn)As (Ga |
| ISSN号 | 0003-6951 ; 0003-6951 |
| 通讯作者 | wang, ky, cas, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. kywang@semi.ac.cn |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | eu [ist-015728, 214499]; epsrc-uk [ep/h002294/01]; epsrc-nsfc [10911130232/a0402]; chinese academy of sciences ; kurata memorial hitachi science and technology foundation ; sumitomo foundation ; epsrc [ep/h003487/1]; [1948027] |
| 语种 | 英语 ; 英语 |
| 资助机构 | EU [IST-015728, 214499]; EPSRC-UK [EP/H002294/01]; EPSRC-NSFC [10911130232/A0402]; Chinese Academy of Sciences ; Kurata Memorial Hitachi Science and Technology Foundation ; Sumitomo Foundation ; EPSRC [EP/H003487/1]; [1948027] |
| 公开日期 | 2011-07-05 ; 2011-07-15 ; 2011-07-05 |
| 附注 | current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (ga,mn)(as,p) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10(5) a cm(-2). this is enabled by a much weaker domain wall pinning compared to (ga,mn)as layers grown on a strain-relaxed buffer layer. the critical current is shown to be comparable with theoretical predictions. the wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. (c) 2010 american institute of physics. [doi:10.1063/1.3532095] |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20929]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Wang, KY, CAS, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. kywang@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Wang KY,Edmonds KW,Irvine AC,et al. Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device, Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device[J]. applied physics letters, APPLIED PHYSICS LETTERS,2010, 2010,97, 97(26):article no.262102, Article no.262102. |
| APA | Wang KY.,Edmonds KW.,Irvine AC.,Tatara G.,De Ranieri E.,...&Wang, KY, CAS, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. kywang@semi.ac.cn.(2010).Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device.applied physics letters,97(26),article no.262102. |
| MLA | Wang KY,et al."Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device".applied physics letters 97.26(2010):article no.262102. |
入库方式： OAI收割
来源：半导体研究所
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